High-speed low-power RF-ADC is targeted at upcoming telecommunication markets such as 5G and Satellite Communications. The RF-ADC has an effective 3dB bandwidth > 9GHz and 10 Effective Number of Bits (ENOB), making it an ideal candidate for FR1 (sub-6 GHz) and FR2 (mmWave 6-100 GHz) 5G deployment scenarios.

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Key Features:

• TSMC: 12/16nm CMOS FinFET

• Resolution: 12-bit

• Sampling rate: 20GSa/s

• Power supplies: 1.8V, 1.2V, 1V and 0.8V

• Power consumption: 800mW

• Differential analog input: 1Vppd

• 3dB Input bandwidth: > 9GHz

• DNL: ± 0.5 LSB

• INL: ± 0.5 LSB

• SNDR: 61.5dBc

• Background time-interleaving skew, linearity and offset calibration​

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